Hi Tinkerer,
I think, for input clamping diode in PI MD is not sense to add term "reverse recovery". This term have to be applied only when at some moment reverse voltage is applied at input clamping diode.
So, the parameter "reverse recovery time" in datasheets is not applicable in our case.
In real situation, the current by clamping resistor discharges diffusion capacitance of the diode via the coil and the parallel resistor of the coil.
The voltage on diode decays and in one moment this voltage began to be lower than the necessary one for conducting via p-n junction, but diffusion capacitance connected in parallel in p-n junction continues
to be discharged via coil and the parallel resistor. At this moment summary damping resistor of the coil is changed of course.
I think, for input clamping diode in PI MD is not sense to add term "reverse recovery". This term have to be applied only when at some moment reverse voltage is applied at input clamping diode.
So, the parameter "reverse recovery time" in datasheets is not applicable in our case.
In real situation, the current by clamping resistor discharges diffusion capacitance of the diode via the coil and the parallel resistor of the coil.
The voltage on diode decays and in one moment this voltage began to be lower than the necessary one for conducting via p-n junction, but diffusion capacitance connected in parallel in p-n junction continues
to be discharged via coil and the parallel resistor. At this moment summary damping resistor of the coil is changed of course.
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