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FROM EDN on-line: Rohm of Japan has developed a power MOSFET, based on silicon carbide SiC), that slashes loss to only 1/40th that of the prior Si-based design. The on-resistance is 7.15 mOhms, and the dielectric strength 1000V.
Rohm of Japan has developed a power MOSFET, based on silicon carbide (SiC), that slashes loss to only 1/40th that of the prior Si-based design. The on-resistance is 7.15 mÙ, and the dielectric strength 1000V. The firm hopes to commercialize the device in 2006 for applications such as home-use consumer electronics and electric vehicles.
The SiC material offers a variety of advantages over Si, including three times the bandgap, 10 times the dielectric breakdown field strength, and significantly lower loss when used in power devices. While researchers have been interested in SiC as a possible successor to Si, the high channel resistance has been a persistent problem. Rohm developed a new structure for the device and improved pyrogenic gate-oxidation technology jointly with professor Hiroyuki Matsunami and associate professor Ohki of the Kyoto University Deptartment of Electronic Science and Engineering. Their efforts not only reduced channel resistance but also achieved a high-efficiency power transistor, which had been impossible to develop previously. Dielectric breakdown strength was boosted through improvements to the structures of the device and the guard ring.
Designed as a replacement for existing Si power devices, the new MOSFET will deliver reduced power consumption in a wide range of applications including appliances, automotive, and power transmission.
Rohm of Japan has developed a power MOSFET, based on silicon carbide (SiC), that slashes loss to only 1/40th that of the prior Si-based design. The on-resistance is 7.15 mÙ, and the dielectric strength 1000V. The firm hopes to commercialize the device in 2006 for applications such as home-use consumer electronics and electric vehicles.
The SiC material offers a variety of advantages over Si, including three times the bandgap, 10 times the dielectric breakdown field strength, and significantly lower loss when used in power devices. While researchers have been interested in SiC as a possible successor to Si, the high channel resistance has been a persistent problem. Rohm developed a new structure for the device and improved pyrogenic gate-oxidation technology jointly with professor Hiroyuki Matsunami and associate professor Ohki of the Kyoto University Deptartment of Electronic Science and Engineering. Their efforts not only reduced channel resistance but also achieved a high-efficiency power transistor, which had been impossible to develop previously. Dielectric breakdown strength was boosted through improvements to the structures of the device and the guard ring.
Designed as a replacement for existing Si power devices, the new MOSFET will deliver reduced power consumption in a wide range of applications including appliances, automotive, and power transmission.