http://www.nexusdetectors.com/Science.html
in this link says
"
The next popular type of metal detectors, capable to compete for better depth, are the PI metal detectors.
Relative to the transmitted in the ground energy, the PI detectors are with lower efficiency than the IB. However the fact
that average PI metal detector can detect targets deeper under ground than average IB detector, is due to the very high level
of the transmitted signals (few hundred volts pulses). With that allowance in their basic principal the PI metal detectors can
win almost any competition for depth.
"
why can not we use IRF mosfet transistors in BFO and VLF?
can not we increase their dept by using this transistors instead of bc517 or else (npn).
what provents us from doing this.
EE brothers ,
I am wondering this.can you explain me.
in this link says
"
The next popular type of metal detectors, capable to compete for better depth, are the PI metal detectors.
Relative to the transmitted in the ground energy, the PI detectors are with lower efficiency than the IB. However the fact
that average PI metal detector can detect targets deeper under ground than average IB detector, is due to the very high level
of the transmitted signals (few hundred volts pulses). With that allowance in their basic principal the PI metal detectors can
win almost any competition for depth.
"
why can not we use IRF mosfet transistors in BFO and VLF?
can not we increase their dept by using this transistors instead of bc517 or else (npn).
what provents us from doing this.
EE brothers ,
I am wondering this.can you explain me.
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