"Generation-recombination noise" in a transistor, particularly due to the base current, refers to a type of electrical noise that occurs when electrons and holes randomly generate or recombine within the semiconductor material of the transistor's base region, causing fluctuations in the base current and subsequently impacting the collector current, leading to a noisy output signal; this noise is most prominent at low frequencies and often exhibits a "1/f" (pink noise) characteristic."
"Compared to transistors on integrated circuits, discrete transistors generally exhibit higher levels of flicker noise due to the less controlled manufacturing process, resulting in more imperfections and variations in the semiconductor material, which are the primary source of flicker noise (also known as 1/f noise) in transistors; whereas, modern integrated circuits with advanced fabrication techniques tend to have significantly lower flicker noise levels due to tighter control over the manufacturing process and smaller feature sizes."
-Google AI overview
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